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參數(shù)資料
| 型號： | H01N45A |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel Power Field Effect Transistor |
| 中文描述： | N溝道功率場效應晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 44K |
| 代理商： | H01N45A |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
H01N45A
HSMC Product Specification
Electrical Characteristics
(T
case
=25
°
C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
ON/OFF
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
V
DS
=Max. Rating
V
DS
=Max. Rating, T
C
=125
o
C
450
-
-
-
-
-
-
1
50
V
I
DSS
Zero Gate Voltage Drain Current
(V
GS
=0)
uA
I
GSS
Gate-Body Leakage Current
(V
DS
=0)
Gate Threshold Voltage
V
GS
=
±
30V
-
-
±
100
nA
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=0.5A
2.3
3
3.7
V
Static Drain-Source On Resistance
-
4.1
4.5
Dynamic
g
FS
C
iss
C
oss
C
rss
*1
Forward Transconductance
V
DS
≥
I
D(on)
xR
DS(on)max.
, I
D
=0.5A
-
1.1
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
185
27.5
6
230
-
10
V
DS
=25V, V
GS
=0V, f=1MHz
pF
Switching On
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
6.7
4
14
2
3.2
-
-
(V
DD
=225V, I
D
=0.5A, R
G
=4.7
,
V
GS
=10V)
ns
20
-
-
(V
DS
=360V, I
D
=0.5A, V
GS
=10V,
R
G
=4.7
)
nC
Switching Off
t
r(Voff)
t
f
t
C
Off-Voltage Rise Time
Fall Time
Cross-Over Time
-
-
-
8.5
12
18
-
-
-
(V
DD
=360V, I
D
=1.5A, R
G
=4.7
,
V
GS
=10V)
ns
Source Drain Diode
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Source-Drain Current
Source-Drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
-
-
-
-
-
-
-
-
-
1.5
6
1.6
-
-
-
*2
A
*1
I
SD
=1.5A, V
GS
=0
I
SD
=1.5A, di/dt=100A/us
V
DD
=100V, T
J
=150oC
V
ns
uC
A
225
530
4.7
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
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