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參數(shù)資料
| 型號(hào)： | H11G1SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.7 to 3.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 封裝： | SURFACE MOUNT PACKAGE-6 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 138K |
| 代理商： | H11G1SM |
tm
H
May 2007
2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
www.fairchildsemi.com
H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
■
High BV
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
High sensitivity to low input current
(Min. 500% CTR at I
Low leakage current at elevated temperature
(Max. 100μA at 80°C)
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
CEO
■
F
= 1mA)
■
■
Applications
■
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
■
■
■
■
General Description
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an inte-
gral base-emitter resistor to optimize elevated tempera-
ture characteristics.
Schematic
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6 BASE
N/C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H11G1SR2M | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| H11G1SR2VM | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| H11G1SVM | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| H11G1TM | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| H11G1TVM | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11G1SR2M | 功能描述:晶體管輸出光電耦合器 Hi Volt Photodarling RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G1SR2VM | 功能描述:晶體管輸出光電耦合器 Hi Volt Photodarling VDE Certified RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11G1SVM | 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV DARL OUTPUT, VDE, SURFACE MOUNT - Bulk |
| H11G1TM | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Photodarlington Optocouplers |
| H11G1TVM | 功能描述:晶體管輸出光電耦合器 Hi Volt Photodarling RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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