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參數資料
| 型號： | H5784-06 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Photosensor Modules |
| 中文描述： | 光敏模塊 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 78K |
| 代理商： | H5784-06 |
28
Product Variations
Specifications
The H5784 series photosensor modules are comprised of a metal package pho-
tomultiplier tube, a low-power consumption high-voltage power supply and a low
noise amplifier. The electrical current from the photomultiplier tube is converted to
a voltage by an amplifier for easy signal processing. The H5784 is highly resistant
to noise since the amplifier is installed near the anode output pin of the photomul-
tiplier tube. The amplifier feedback resistance of 1 M
allows a current-to-voltage
conversion factor of 1 V/
μ
A, and covers a frequency bandwidth from DC to 20
kHz.
Metal package PMT
Photosensor Modules H5784 Series
Type No.
H5784
H5784-01
H5784-02
H5784-03
H5784-04
H5784-06
H5784-20
300 nm to 650 nm
300 nm to 850 nm
300 nm to 880 nm
185 nm to 650 nm
185 nm to 850 nm
185 nm to 650 nm
300 nm to 900 nm
For general applications in visible range
For general applications in visible to near IR range
High sensitivity in near IR range.
For UV to visible range
For UV to near IR range
For UV to visible range (synthetic silica window) with higher sensitivity below 300 nm than -03 type
Infrared-extended multialkali photocathode with enhanced sensitivity
Spectral Response
1 V/
μ
A
Current-to-voltage
Conversion Factor
DC to 20 kHz
Frequency
Bandwidth
Features
*1: Measured at the peak sensitivity wavelength *2: Control voltage = +0.8 V *3: After 30 minute storage in darkness
*4: Cable RG-174/U, Cable length 450 mm, Load resistance = 1 M
, Load capacitance = 22 pF
*5: The time required for the output to reach a stable level following a change in the control voltage from +1.0 V to +0.5 V.
Parameter
H5784
Series
-01/-04
Suffix
Input Voltage
Max. Input Voltage
Max. Input Current
Max. Output Signal Voltage
Max. Control Voltage
Recommended Control Voltage Adjustment Range
Effective Area
Sensitivity Adjustment Range
Peak Sensitivity Wavelength
Current-to-Voltage Conversion Factor
Offset Voltage *
2
Ripple Noise *
2
*
4
(peak to peak)
Settling Time *
5
Operating Ambient Temperature
Storage Temperature
Weight
±
11.5 to
±
15.5
±
18
+9/-1
+10 (load resistance 10 k
)
+1.0
(Input impedance
100 k
)
+0.25 to +0.9
8
1: 10
4
400
80
150
—
0.2
60
1.5
×
10
7
7.5
×
10
7
30
0.4
4
1
±
3
2
2
+5 to +50
-20 to +50
100
None/-03/-06
420
40
70
8
—
62
1.0
×
10
7
5.0
×
10
7
43
0.2
2
-02
500
200
250
—
0.25
58
2.5
×
10
7
1.25
×
10
8
29
2
20
-20
630
350
500
—
0.45
78
3.5
×
10
7
2.5
×
10
8
39
2
20
Unit
—
V
V
mA
V
V
V
mm
—
nm
μ
A/lm
—
—
mA/W
V/lm
V/nW
mV
V/
μ
A
mV
mV
s
°
C
°
C
g
Min.
Typ.
Min.
Typ.
Typ.
Max.
Typ.
Max.
Luminous Sensitivity
Blue Sensitivity Index (CS 5-58)
Red/White Ratio
Radiant Sensitivity *
1
Luminous Sensitivity *
2
Radiant Sensitivity *
1
*
2
Voltage Output Depending
on PMT Dark Current *
2
*
3
A
C
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|---|---|
| H5784-20 | Photosensor Modules |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| H5784-20 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Photosensor Modules |
| H57V1262GFR-50X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| H57V1262GFR-60X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| H57V1262GFR-70X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| H57V1262GFR-75X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
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