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參數(shù)資料
| 型號(hào)： | H5N2522FN-E-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | H5N2522FN-E-T2 |
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 1 of 6
H5N2522FN
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1573-0210
Rev.2.10
May 08, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code:
PRSS0003AB-A
(Package name:
TO-220FN)
1
23
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
250
±30
12
48
12
48
12
9
35
3.57
150
–55 to +150
Drain to Source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
Note1
Note1
Note3
Note3
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