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參數(shù)資料
| 型號： | H9926S |
| 廠商： | HSMC CORP. |
| 英文描述： | Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) |
| 中文描述： | 雙N溝道增強(qiáng)型MOSFET（20V的，6A條） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | H9926S |
HI-SINCERITY
MICROELECTRONICS CORP.
H9926S / H9926CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926S, H9926CS
HSMC Product Specification
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
R
=40m
@V
=2.5V, I
=5.2A; R
=30m
@V
GS
=4.5V, I
D
=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
Parameter
Ratings
Units
V
DS
Drain-Source Voltage
20
V
V
GS
Gate-Source Voltage
±
12
V
I
D
Drain Current (Continuous)
6
A
I
DM
Drain Current (Pulsed)
*1
30
A
Total Power Dissipation @T
A
=25
o
C
2
W
P
D
Total Power Dissipation @T
A
=75
o
C
1.3
W
T
j
, T
stg
Operating and Storage Temperature Range
-55 to +150
°
C
R
θ
JA
Thermal Resistance Junction to Ambient
*2
62.5
°
C/W
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
8-Lead Plastic
SO-8
Package Code: S
5
1
23
4
6
7
8
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
H9926S Symbol & Pin Assignment
1
2
3
4
8
7
6
5
Q1
Q2
H9926CS Symbol & Pin Assignment
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6 / 7 / 8: Drain
1
2
3
4
8
7
6
5
Q1
Q2
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|---|---|
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