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參數資料
型號: HAF2015RJ
文件頁數: 1/6頁
文件大小: 30K
代理商: HAF2015RJ
HAF2012(L),HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-677A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
相關PDF資料
PDF描述
HAF2017 Datasheet|ADE-208-1637|MAR.01.03|124K
HAF2012 Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD
HAL525SF-C Industrial Control IC
HAL525SO-A Hall-Effect Switch
HAL525SO-C Hall-Effect Switch
相關代理商/技術參數
參數描述
HAF2015RJ-EL 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching
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HAF2017-90L 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOSFET Power Switching
HAF2017-90L-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK(L)-(2) Sack
HAF2017-90S 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOSFET Power Switching
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