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參數資料
| 型號： | HAT3010R |
| 文件頁數： | 1/11頁 |
| 文件大小： | 61K |
| 代理商： | HAT3010R |
Application
Power switching
Features
Low on–resistance
Capable of 2.5V gate drive
Low drive current
High density mounting
Ordering Information
————————————————————
Hitachi Cord
————————————————————
EIAJ Cord
————————————————————
JEDEC Cord
————————————————————
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
FP–8D
SC–527–8A
—
Ratings
————————
Nch
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Channel dissipation
Pch***
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
1 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
***
2 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
Symbol
Pch
Unit
30
–30
V
±10
±10
V
2.5
–2.5
A
10
–10
A
1.5
W
1
W
150
°C
–55 to +150
°C
1234
5
6
7
8
SOP–8
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
HAT3001F
Silicon N Channel / P Channel Complementary Power MOS FET
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