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參數資料
| 型號： | HB54A5129F1U-B75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512MB Registered DDR SDRAM DIMM |
| 中文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 186K |
| 代理商： | HB54A5129F1U-B75B |
Document No. E0191H30 (Ver. 3.0)
Date Published September 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
DATA SHEET
512MB Registered DDR SDRAM DIMM
HB54A5129F1U-A75B/B75B/10B
(64M words
×
72 bits, 1 Bank)
Description
The HB54A5129F1U is a 64M
×
72
×
1 bank Double
Data Rate (DDR) SDRAM Module, mounted 18 pieces
of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
TSOP package, 1 piece of PLL clock driver, 2 pieces of
register driver and 1 piece of serial EEPROM (2k bits
EEPROM) for Presence Detect (PD). Read and write
operations are performed at the cross points of the CK
and the /CK. This high-speed data transfer is realized
by the 2-bit prefetch-pipelined architecture. Data
strobe (DQS) both for read and write are available for
high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 184-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs. Decoupling
capacitors are mounted beside each TSOP on the
module board.
Features
184-pin socket type package (dual lead out)
Outline: 133.35mm (Length)
×
30.48mm (Height)
×
4.00mm (Thickness)
Lead pitch: 1.27mm
2.5V power supply (VCC/VCCQ)
SSTL-2 interface for all inputs and outputs
Clock frequency: 143MHz/133MHz/125MHz (max.)
Data inputs and outputs are synchronized with DQS
4 banks can operate simultaneously and
independently (Component)
Burst read/write operation
Programmable burst length: 2, 4, 8
Burst read stop capability
Programmable burst sequence
Sequential
Interleave
Start addressing capability
Even and Odd
Programmable /CAS latency (CL): 3, 3.5
8192 refresh cycles: 7.8
μ
s (8192/64ms)
2 variations of refresh
Auto refresh
Self refresh
相關PDF資料 |
PDF描述 |
|---|---|
| HB54A5129F1U | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-10B | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-A75B | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1 | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1-10B | 512MB Registered DDR SDRAM DIMM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HB54A5129F2 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A5129F2-10B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A5129F2-A75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A5129F2-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A5129F2U | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
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