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參數資料
| 型號： | HBC517 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | HBC517 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBC517
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005.02.04
Page No. : 1/4
HBC517
HSMC Product Specification
Description
General Purpose High Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 625 mW
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 30 V
V
EBO
Emitter to Base Voltage.............................................................................................................................. 10 V
I
C
Collector Current........................................................................................................................................ 500 mA
Electrical Characteristics
(T
A
=25
°
C)
Characteristic
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE
V
CE(sat)
V
BE(sat)
Test Condition
I
C
=0.1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, V
CE
=2V
I
C
=100mA, I
B
=1mA
I
C
=100mA, I
B
=1mA
I
C
=100mA, V
CE
=2V,
f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
Min.
40
30
10
-
-
30K
-
-
Typ.
-
-
-
-
-
-
-
1.5
Max.
-
-
-
1
1
-
1
2
Unit
V
V
V
uA
uA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
Current Gain Bandwidth Product
f
T
-
220
-
MHz
Collector Output Capacitance
C
ob
-
5
-
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
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