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參數資料
| 型號： | HBT169M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | THYRISTORS |
| 中文描述： | 晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | HBT169M |
HI-SINCERITY
MICROELECTRONICS CORP.
HBT169M
THYRISTORS
Spec. No. : HM200105
Issued Date : 2001.10.01
Revised Date : 2001.11.20
Page No. : 1/4
HBT169M
HSMC Product Specification
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended
for use in general purpose switching and phase control applications. These
devices are intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
Quick Reference Data
Symbol
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
Max.
400
0.5
0.8
8
Unit
V
A
A
A
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Pin Configuration
Pin
Description
1
Gate
2
Anode
3
Cathode
1
3
2
Symbol
A
K
G
Limtiing Values
Symbol
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
Parameter
Min.
-
-
-
-
-
-
Max.
400
0.5
0.8
8
9
0.32
Units
V
A
A
A
A
A
2
S
Repetitive peak off-state voltages
Average on-state current (half sine wave; T
lead
≤
83
°
C)
RMS on-state current (all conduction angles)
Non-repetitive peak on-state current (t=10ms)
Non-repetitive peak on-state current (t=8.3ms)
I
2
t for fusing (t=10ms)
Repetitive rate of rise of on-state current after triggering
(I
TM
=2A; I
G
=10mA; dI
G
/dt=100mA/us)
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power (over any 20ms period)
Storage temperature
Operating junction temperature
I
TSM
I
2
t
dI
T
/dt
-
50
A/us
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
Tstg
Tj
-
-
1
5
5
2
A
V
V
W
W
°
C
°
C
-
-
-
-
0.1
150
125
SOT-89
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