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參數資料
| 型號： | HC5503TCB |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 模擬傳輸電路 |
| 英文描述： | Bipolar Transistor; Collector Emitter Voltage, Vceo:50V; Transistor Polarity:NPN; Power Dissipation:900mW; DC Current Gain Min (hfe):180; Collector Current:500A; Package/Case:3-TO-92 |
| 中文描述： | TELECOM-SLIC, PDSO24 |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HC5503TCB |
52
Pinouts
Level Linearity
2-Wire to TX, RX to 2-Wire
At 1kHz, (Note 3) Referenced to 0dBm Level
+3 to -40dBm
-
-
±
0.05
dB
-40 to -50dBm
-
-
±
0.1
dB
-50 to -55dBm
-
-
±
0.3
dB
Power Supply Rejection Ratio
(Note 3)
V
CC
to 2-Wire
200 - 3400kHz, R
L
= 600
-
40
-
dB
V
CC
to Transmit
-
40
-
dB
V
BAT
to 2-Wire
-
40
-
dB
V
BAT
to Transmit
-
40
-
dB
Logic Input Current (RS, RC)
0V
≤
V
IN
≤
5V
-
-
±
100
μ
A
Logic Inputs (RS, RC)
Logic ‘0’ V
IL
-
-
0.8
V
Logic ‘1’ V
IH
2.0
-
5.5
V
Logic Output (SHD)
Logic ‘0’ V
OL
I
LOAD
800
μ
A, V
CC
= 5V
-
0.1
0.5
V
Logic ‘1’ V
OH
I
LOAD
40
μ
A, V
CC
= 5V
2.7
-
5.0
V
NOTES:
3. These parameters are controlled by design or process parameters and are not directly tested. These parameters are characterized upon initial
design release, upon design changes which would affect these characteristics, and at intervals to assure product quality and specification com-
pliance.
Electrical Specifications
Unless Otherwise Specified, V
BAT
= -48V, V
CC
= 5V, AG = BG = DG = 0V, Typical Parameters
T
A
= 25
o
C. Min-Max Parameters are Over Operating Temperature Range
(Continued)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
HC5503T
(PDIP)
TOP VIEW
HC5503T
(SOIC)
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
14
15
16
17
18
19
20
21
22
13
12
TIP
RING
DGND
RS
N/C
RF
V
BAT
TX
N/C
T3
N/C
AGND
T1
C1
RX
T2
N/C
N/C
SHD
TF
V
CC
BGND
1
2
3
4
5
6
7
8
9
10
11
12
16
17
18
19
20
21
22
23
24
15
14
13
TIP
RING
C1
DGND
RS
TF
RF
BGND
TX
N/C
T3
N/C
AGND
T1
N/C
RX
T2
N/C
N/C
N/C
SHD
N/C
V
CC
V
BAT
HC5503T
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