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參數資料
| 型號： | HCPL-3180-060 |
| 英文描述： | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| 中文描述： | 當前，高速式IGBT / MOSFET的門極驅動光電耦合器 |
| 文件頁數： | 1/19頁 |
| 文件大?。?/td> | 466K |
| 代理商： | HCPL-3180-060 |
Agilent HCPL-3180 2 Amp Output
Current, High Speed IGBT/MOSFET Gate
Drive Optocoupler
Data Sheet
Description
This family of devices consists of
a GaAsP LED. The LED is
optically coupled to an
integrated circuit with a power
stage. These optocouplers are
ideally suited for high frequency
driving of power IGBT and
MOSFETs used in Plasma
Display Panels, high
performance DC/DC convertors
and motor control invertor
applications.
Ordering Information
Specify part number followed by
option number (if desired):
Example : HCPL-3180-XXX
Features
2 A minimum peak output current
250 KHz maximum switching
speed
High speed response: 200 ns max
Propagation delay over
temperature range
10 KV/us minimum common mode
rejection (CMR) at V
CM
=1500 V
Under voltage lockout protection
(UVLO) with hysteresis
Wide operating temperature
range: -40 °C to +100
°
C
Wide V
CC
operating range:
10 V to 20 V
20 ns typ pulse width distortion
Safety Approvals:
UL approval pending
3750 V
RMS
for 1 minute.
CSA approval
DIN EN 60747-5-2 approval
pending
Applications
Plasma Display Panel (PDP)
Distributed power architecture
(DPA)
Switch mode rectifier (SMR)
High performance DC/DC
convertor
High performance switch mode
power supply (SMPS)
High performance uninterruptible
power supply (UPS)
Isolated IGBT/Power MOSFET
gate drive
No option = Standard DIP
package, 50 per tube.
300 = Gull Wing Surface Mount
Option, 50 per tube.
500 = Tape and Reel Packaging
Option.
060 = DIN EN 60747-5-2 Option,
VIORM=630 Vpeak (pending
approval)
N/C
ANODE
CATHODE
N/C
V
CC
V
O
V
EE
1
6
3
4
2
7
8
5
V
O
Functional Diagram
A 0.1 uF bypass capacitor must be connected between pins 5 and 8.
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/
or degradation which may be induced by ESD.
相關PDF資料 |
PDF描述 |
|---|---|
| HCPL-3180-300 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-3180-500 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-3180 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL3180 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-354 | AC Input Phototransistor Optocoupler SMD Mini-Flat Type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HCPL-3180-060E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3180-300 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3180-300E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3180-360 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3180-360E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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