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參數資料
| 型號： | HCS20D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Dual 4-Input NAND Gate |
| 中文描述： | 輻射加固雙路4輸入與非門 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 179K |
| 代理商： | HCS20D |
43
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS20MS
Radiation Hardened
Dual 4-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-183S CDIP2-T14, LEAD FINISH C
TOP VIEW
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-183S CDFP3-F14, LEAD FINISH C
TOP VIEW
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
An
Bn
Cn
Dn
Yn
L
X
X
X
H
X
L
X
X
H
X
X
L
X
H
X
X
X
L
H
H
H
H
H
L
NOTE: L = Logic Level Low, H = Logic level High, X = Don’t Care
A1
B1
NC
C1
D1
Y1
GND
VCC
D2
C2
NC
B2
A2
Y2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A1
B1
NC
C1
D1
Y1
GND
VCC
D2
C2
NC
B2
A2
Y2
An
Bn
Yn
Cn
Dn
(5, 13)
(4, 12)
(2, 10)
(1, 9)
(6, 8)
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
≤
5
μ
A at VOL, VOH
Description
The Intersil HCS20MS is a Radiation Hardened Dual 4-Input
NAND Gate. A low on any input forces the output to a High state.
The HCS20MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS20MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
SCREENING
LEVEL
PACKAGE
HCS20DMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead SBDIP
HCS20KMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead Ceramic
Flatpack
HCS20D/
Sample
+25
o
C
Sample
14 Lead SBDIP
HCS20K/
Sample
+25
o
C
Sample
14 Lead Ceramic
Flatpack
HCS20HMSR
+25
o
C
Die
Die
September 1995
Spec Number
518761
File Number
3050.1
相關PDF資料 |
PDF描述 |
|---|---|
| HCS20DMSR | Radiation Hardened Dual 4-Input NAND Gate |
| HCS20K | Radiation Hardened Dual 4-Input NAND Gate |
| HCS20KMSR | Radiation Hardened Dual 4-Input NAND Gate |
| HCS20MS | Radiation Hardened Dual 4-Input NAND Gate |
| HCS240HMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HCS20DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCS20HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCS20K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCS20KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCS20MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
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