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參數(shù)資料
型號: HCS241D
廠商: Intersil Corporation
英文描述: Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
中文描述: 輻射加固反相八路三態(tài)緩沖器/線路驅(qū)動器
文件頁數(shù): 3/9頁
文件大小: 169K
代理商: HCS241D
304
Specifications HCS241MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Gates
θ
JA
θ
JC
72
o
C/W
107
o
C/W
24
o
C/W
28
o
C/W
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
μ
A
2, 3
+125
o
C, -55
o
C
-
750
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V
VIN = VCC or GND
1
+25
o
C
-
±
0.5
μ
A
2, 3
+125
o
C, -55
o
C
-
±
5.0
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force
Voltage = 0V or VCC
1
+25
o
C
-
±
1.0
μ
A
2, 3
+125
o
C, -55
o
C
-
±
50
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
Spec Number
518838
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