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參數資料
| 型號： | HCT10 |
| 廠商： | System Logic Semiconductor Co., Ltd. |
| 英文描述： | Triple 3-Input NAND Gate(High-Performance Silicon-Gate CMOS) |
| 中文描述： | 三3輸入與非門（高性能硅柵CMOS） |
| 文件頁數： | 2/4頁 |
| 文件大小： | 33K |
| 代理商： | HCT10 |
SL74HCT10
S ystem Logic
Semiconductor
SLS
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
±
20
±
25
±
50
V
I
IN
DC Input Current, per Pin
mA
I
OUT
DC Output Current, per Pin
mA
I
CC
DC Supply Current, V
CC
and GND Pins
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg
Storage Temperature
-65 to +150
°
C
°
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
°
C from 65
°
to 125
°
C
SOIC Package: : - 7 mW/
°
C from 65
°
to 125
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
°
C
t
r
, t
f
Input Rise and Fall Time (Figure 1)
0
500
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
≤
(V
IN
or V
OUT
)
≤
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
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