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參數資料
| 型號： | HCT802TX |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual En hance ment Mode MOSFET |
| 中文描述： | 2000 mA, 90 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/2頁 |
| 文件大小： | 178K |
| 代理商： | HCT802TX |
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
15-34
Ab so ute Maxi mum Rat ngs
Drain- Source Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V
Gate- Source Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
20 V
Drain Cur ent (Lim ted by Tj max) N- Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
P- Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A
Op er at ng and Stor age Tem pera ure . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Power Dis si pa ion
T
A
= 25
o
C (Both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W To al
T
S
= 25
o
C (Both de vices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W To al
(1)
(Ts = Substrate that the package is soldered to)
Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measureable as an outgoing test.
Prod uct Bul e in HCT802
Sep em ber 1996
Dual En hance ment Mode MOS FET
Types HCT802, HCT802TX, HCT802TXV
Fea ures
6 pad surface mount package
V
DS
= 90V
R
DS(on)
<5
I
D(on)
N-Channel = 1.5A
P-Channel = 1.1A
Two devices selected for V
DS
, I
D(on)
and R
DS(on)
similarity
Full TX Processing Available
Gold plated contacts
De scrip ion
HCT802 offers an N-Channel and P-
Channel MOS transistor in a hermetic
ceramic surface mount package. The
devices used are similar to industry
standards 2N6661 N-Channel device
and VP1008 P-Channel device. These
two enhancement mode MOSFETS
are particularly well matched for V
DS
,
I
DS(on)
, R
DS(on)
and G
fs
.
Order HCT802TX for processing per
MIL-PRF-19500. Typical screening
and lot acceptance tests are provided
on page 13-4. TX products receive a
V
GS
HTRB at 16 V for 48 hrs. at 150
o
C and a V
DS
HTRB at 72 V for 160 hrs.
at 150
o
C.
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| HD-0313M3-FH | Hook-Up Wire; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HCT802TXV | 功能描述:MOSFET DUAL ENHANCE HERMETIC SMD RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| HCT810 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 10MA I(D) | LLCC |
| HCT-839-A-MH-Z-X40 | 制造商:Honeywell Sensing and Control 功能描述:HyCal Sensing Products |
| HCT90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| HCT-900 | 制造商:OK International 功能描述:Bulk |
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