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參數資料
| 型號： | HD44H11 |
| 廠商： | HSMC CORP. |
| 英文描述： | Card Edge Connector; No. of Contacts:12; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 31K |
| 代理商： | HD44H11 |
HI-SINCERITY
MICROELECTRONICS CORP.
HD44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 1/3
HD44H11
HSMC Product Specification
Description
The HD44H11 is designed for various specific and general purpose
applications, such as:output and driver stages of amplifiers operating
at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.....................................................................................+150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 50 W
Total Power Dissipation (Ta=25
°
C).................................................................................. 1.67 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 80 V
BVCEO Collector to Emitter Voltage.................................................................................... 80 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................. 10 A
IB Base Current..................................................................................................................... 5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
80
80
80
5
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
130
50
Max.
-
-
-
-
10
100
1
1.5
-
-
-
-
Unit
V
V
V
V
uA
uA
V
V
Test Conditions
IC=100mA, IB=0
IC=100mA, IB=0
IC=1mA, IC=0
IE=1mA
VCE=80V
VEB=5V
IC=8A, IB=0.4A
IC=8A, IB=0.8A
IC=2A, VCE=1V
IC=4A, VCE=1V
VCB=10V
VCE=1V, IC=500mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
TO-220
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