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參數(shù)資料
| 型號： | HEP805 |
| 廠商： | DAESAN ELECTRONICS CORPORATION |
| 英文描述： | CURRENT 8.0 AMPERES VOLTAGE 50 TO 600 VOLTS |
| 中文描述： | 8.0安培電流電壓50至600伏 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 143K |
| 代理商： | HEP805 |
RATINGS AND CHARACTERISTIC CURVES HEP801 THRU HEP806
NONINDUCTIVE
10
NONINDUCTIVE
DUT
OSCILLOSCOPE
(NOTE 2 )
(+ )
50Vdc
(approx)
(-)
NOTES: 1 . RISE TIME = 7nsmax. INPUT
IMPEDANCE= 1 MEGOHM 22p
2 . RISE ME = 10ns max.SOURSE
IMPEDANCE = 50ohmsf
+0.5A
-1.0A
SET TIME BASE FOR
5/ 10ns / cm
NONINDUCTIVE
FIG . 2 -MAXIMUM AVERAGE FORWARDCURRENT DERATING
A
20
16
12
8
4
00 0 00
CASE TEMPERATURE . ( % )
150
FIG . 3 -TYPICAL REVERSE CHARACTERISTICS
1000
I
A
0
PERCENT OF RATED PEAK REVERSE VOLTAGE . (%)
20
40
60
80
100
120 140
100
10
1
0.1
Tj=125 C
Tj=25 C
FIG . 4 -MAXIMUM NON - REPETITIVE FORWARD SURGE
CURRENT
150
1 2 5 10 20 50 100
NMBER OF CYCLES AT 60Hz
120
90
60
30
FIG . 6 -TYPICAL FRWARD CHARACTERISTICS
100
30
10
3.0
1.0
0.3
0.1
0.03
.01
1.0
1.4
1.6
1.8
.4
.6
.8
1.2
FORWARD VOLTAGE . ( V )
FIG . 5 -TYPICAL JUNCTIOON CAPACITANCE
1 2 10 20 0
REVERSE VOLTAGE . ( V)
100
200 00
150
120
90
60
30
P
C
I
PULSE
GENERATOR
( NOTE 2 )
-0.25A
0
HEP0-HEP0
HEP806
HEP806
HEP0
HEP80 1-HEP 805
0
8.3ms Single Half Sine
Wave JEDEC Method
FIG . 1 -REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
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參數(shù)描述 |
|---|---|
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