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參數資料
| 型號： | HER108SG |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Octal D-type Edge-Triggered Flip-Flops With 3-State Outputs 20-CDIP -55 to 125 |
| 中文描述： | 1.0安培。玻璃鈍化高效整流二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | HER108SG |
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capability
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.35 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
HER101
THRU
HER108
DO-41
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
Dimensions in inches and (millimeters)
2001-5
Operating and Storage Temperature Range
T
J
, T
STG
-65 to + 150
0
C
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
Amps
1.0
30
15
Amps
pF
HER101 HER102 HER103 HER104 HER105
HER106
HER108
UNITS
200
HER107
50
35
50
100
70
100
140
200
300
210
300
400
280
400
600
420
600
1000
700
1000
800
560
800
Volts
Volts
Volts
12
HER105P
400
280
400
50
Maximum Reverse Recovery Time (Note 1)
trr
75
nSec
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
CHARACTERISTICS
V
F
SYMBOL
I
R
5.0
100
uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
1.0
1.70
HER101 HER102 HER103 HER104 HER105
HER106
HER108
UNITS
HER107
HER105P
1.0
1.3
1.0 (25.4)
MIN.
.166 (4.2)
.205 (5.2)
1.0 (25.4)
MIN.
.107 (2.7)
.080 (2.0)
DIA.
.034 (0.9)
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PDF描述 |
|---|---|
| HER102SG | Triple 3-Input Positive-NOR Gates 14-CDIP -55 to 125 |
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| HER102 | 1.0A HIGH EFFICIENCY RECTIFIER |
| HER103 | Triple 3-Input Positive-NOR Gates 14-CFP -55 to 125 |
| HER106 | Octal, Hex, And Quad D-type Flip-Flops With Clock Enable 20-CDIP -55 to 125 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HER108SG R0 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 1KV 1A 2-Pin Case A-405 T/R |
| HER108S-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 1KV 1A 2-Pin Case A-405 T/R |
| HER108-T | 功能描述:整流器 1A 1000V 70ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HER108-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A HIGH EFFICIENCY RECTIFIER |
| HER108-TB | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A ULTRAFAST DIODE |
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