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參數資料
| 型號： | HER508-TB |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 5.0A ULTRAFAST DIODE |
| 中文描述： | 5.0a中超快二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | HER508-TB |
HER501 – HER508
1 of 4 2006 Won-Top Electronics
Pb
HER501 – HER508
5.0A ULTRAFAST DIODE
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
C
!
Case: DO-201AD, Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 1.2 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
HER
501
HER
502
HER
503
HER
504
HER
505
HER
506
HER
507
HER
508
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
300
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
210
280
420
560
700
V
Average Rectified Output Current
(Note 1) @T
A
= 55°C
I
O
5.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage @I
F
= 5.0A
V
FM
1.0
1.3
1.7
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
100
μA
Reverse Recovery Time (Note 2)
t
rr
50
75
nS
Typical Junction Capacitance (Note 3)
C
j
75
50
pF
Operating Temperature Range
T
j
-65 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-201AD
Min
25.4
7.20
1.20
4.80
Dim
A
B
C
D
Max
—
9.50
1.30
5.30
All Dimensions in mm
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