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參數(shù)資料
型號: HERAF1001G
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
中文描述: 隔離10.0安培。玻璃鈍化高效整流二極管
文件頁數(shù): 1/2頁
文件大小: 213K
代理商: HERAF1001G
Dimensions in inches and (millimeters)
Version: A06
HERAF1001G
-
HERAF1008G
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.0MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds 0.25”,(6.35mm) from case.
Mounting torque : 5 in – 1bs. max.
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERAF
1001G
HERAF
1002G
HERAF
1003G
HERAF
1004G
HERAF
1005G
HERAF
1006G
HERAF
1007G
HERAF
1008G
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100 200 300
400 600
800 1000
V
Maximum RMS Voltage
V
RMS
35
70
140 210
280 420
560 700
V
Maximum DC Blocking Voltage
V
DC
50
100 200 300
400 600
800 1000
V
Maximum Average Forward Rectified
Current @T
C
=100
o
C
I
(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
150
A
Maximum Instantaneous Forward Voltage
@10.0A
V
F
1.0
1.3
1.7
V
Maximum DC Reverse Current
@T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
I
R
10
400
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
80
60
pF
Typical Thermal Resistance (Note 3)
R
θJC
2.0
o
C/W
Operating Temperature Range
T
J
-65 to +150
o
C
Storage Temperature Range
T
STG
-65 to +150
o
C
Notes:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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相關代理商/技術參數(shù)
參數(shù)描述
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HERAF1001G_10 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
HERAF1001G_12 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
HERAF1002G 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
HERAF1002G C0 功能描述:整流器 10A 100V GLS PASS HI EFF SNGL ISOLATED RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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