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參數資料
| 型號： | HFA3127R |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra High Frequency Transistor Arrays |
| 中文描述： | 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MO-220VEED-2 |
| 封裝： | 3 X 3 MM, PLASTIC, QFN-16 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 306K |
| 代理商： | HFA3127R |
1
FN3076.13
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
T
of 8GHz while the PNP transistors
provide a f
T
of 5.5GHz. Both types exhibit low noise (3.5dB),
making them ideal for high frequency amplifier and mixer
applications.
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
Features
NPN Transistor (f
T
) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (h
FE
). . . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP Transistor (f
T
). . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
PNP Current Gain (h
FE
). . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP Early Voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . .20V
Noise Figure (50
) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA
Complete Isolation Between Transistors
Pin Compatible with Industry Standard 3XXX Series
Arrays
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
VHF/UHF Amplifiers
VHF/UHF Mixers
IF Converters
Synchronous Detectors
Ordering Information
PART NUMBER*
PART MARKING
TEMP. RANGE (°C)
PACKAGE
PKG. DWG. #
HFA3046B
HFA3046B
-55 to 125
14 Ld SOIC
M14.15
HFA3046BZ (Note)
HFA3046BZ
-55 to 125
14 Ld SOIC (Pb-free)
M14.15
HFA3096B
HFA3096B
-55 to 125
16 Ld SOIC
M16.15
HFA3096BZ (Note)
HFA3096BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3127B
HFA3127B
-55 to 125
16 Ld SOIC
M16.15
HFA3127BZ (Note)
HFA3127BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3127R
127
-55 to 125
16 Ld 3x3 QFN
L16.3x3
HFA3127RZ (Note)
127Z
-55 to 125
16 Ld 3x3 QFN (Pb-free)
L16.3x3
HFA3128B
HFA3128B
-55 to 125
16 Ld SOIC
M16.15
HFA3128BZ (Note)
HFA3128BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3128R
128
-55 to 125
16 Ld 3x3 QFN
L16.3x3
HFA3128RZ (Note)
128Z
-55 to 125
16 Ld 3x3 QFN (Pb-free)
L16.3x3
*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Data Sheet
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
December 21, 2005
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PDF描述 |
|---|---|
| HFA3127RZ | Ultra High Frequency Transistor Arrays |
| HFA3128BZ | Ultra High Frequency Transistor Arrays |
| HFA3128R | Ultra High Frequency Transistor Arrays |
| HFA3128RZ | Ultra High Frequency Transistor Arrays |
| HFA3102BZ | Dual Long-Tailed Pair Transistor Array |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HFA3127R96 | 功能描述:IC TRANS ARRAY 5X NPN 16QFN RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| HFA3127RZ | 功能描述:射頻雙極小信號晶體管 W/ANNEAL TXARRAY 5X NPN 16LD 3X3 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3127RZ96 | 功能描述:射頻雙極小信號晶體管 W/ANNEAL TXARRAY 5X NPN 16LD 3X3 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3128 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Transistor Arrays |
| HFA3128B | 功能描述:IC TRANSISTOR ARRAY PNP 16-SOIC RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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