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參數資料
| 型號： | HFM103-M |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Ultra fast recovery type |
| 中文描述： | 超快速恢復類型 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | HFM103-M |
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HFM101
THRU
HFM108
DO-214AC
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
Dimensions in inches and (millimeters)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
Volts
Volts
Volts
Amps
1.0
30
15
-65 to + 150
Amps
pF
mJ
0
C
UNITS
12
HFM101
50
35
50
HFM102
100
70
100
HFM104
300
210
300
HFM105
400
280
400
HFM107
800
560
800
HFM108
1000
700
1000
HFM103
200
140
200
HFM106
600
420
600
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
2002-2
Maximum DC Reverse Current at
Rated DC Blocking Voltage
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
uAmps
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average
T
A
= 55
o
C
Maximum Forward Voltage at 1.0A DC
Volts
5.0
100
50
Maximum Reverse Recovery Time (Note 1)
HFM101
HFM106
HFM103
HFM107 HFM108
HFM104
50
1.0
1.7
75
HFM102
HFM105
1.3
@T
A
= 25
@T
A
= 125
o
C
o
C
Pulse energy, non repetitive(inductive load switch off )
ER
20
相關PDF資料 |
PDF描述 |
|---|---|
| HFM103-MH | Chip Silicon Rectifier - Ultra fast recovery type |
| HFM104 | Ultra fast recovery type |
| HFM104-L | Chip Silicon Rectifier - Ultra fast recovery type |
| HFM104-M | Ultra fast recovery type |
| HFM104-MH | Chip Silicon Rectifier - Ultra fast recovery type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HFM103-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Silicon Rectifier - Ultra fast recovery type |
| HFM103-MU1D | 制造商:CHENDA 制造商全稱:Chendahang Electronics Co., Ltd 功能描述:SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
| HFM103W | 制造商:Rectron Semiconductor 功能描述: |
| HFM103-W | 功能描述:整流器 1A 200V 50ns GP RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFM103W-W | 功能描述:整流器 1A 200V 50ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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