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參數資料
| 型號： | HGT1S10N120BNS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, NPT Series N-Channel IGBT(35A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/7頁 |
| 文件大小： | 81K |
| 代理商： | HGT1S10N120BNS |
1
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are
N
on-
P
unch
T
hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Symbol
Features
35A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance
SPICE Model
Temperature Compensating
SABER Model
www.intersil.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG10N120BN
TO-247
G10N120BN
HGTP10N120BN
TO-220AB
10N120BN
HGT1S10N120BNS
T0-263AB
10N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNS9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
January 2000
File Number
4575.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABER is a trademark of Analogy, Inc.
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTG12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGT1S12N60A4S | 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
| HGT1S10N120BNST | 功能描述:IGBT 晶體管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S11N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶體管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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