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參數資料
| 型號： | HGT1S12N60C3S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/7頁 |
| 文件大小： | 172K |
| 代理商： | HGT1S12N60C3S9A |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C3S
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49123.
Symbol
Features
24A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3S
TO-263AB
S12N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
C
E
G
GATE
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
EMITTER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
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| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S1N120BNDS | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTP1N120BND | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGT1S20N60A4S9A | 600V, SMPS Series N-Channel IGBTsnull |
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| HGT1S14N36G3VLS | 功能描述:IGBT 晶體管 Coil Dr 14A 360V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S14N36G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N36G3VLT | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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