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參數資料
型號: HGT1S14N41G3VLS
英文描述: TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB
中文描述: 晶體管| IGBT的|正陳| 445V五(巴西)國際消費電子展| TO - 220AB現有
文件頁數: 1/8頁
文件大小: 146K
代理商: HGT1S14N41G3VLS
1
TM
File Number
4887
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright Intersil Corporation 2000
HGT1S14N41G3VLS, HGTP14N41G3VL
14A, 410V N-Channel, Logic Level, Voltage
Clamping IGBTs
This N-Channel IGBT is a MOS gated,
logic level
device
which is intended to be used as an ignition coil driver in
automotive ignition circuits
. Unique features include an
active voltage clamp between the collector and the gate
which provides
Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide
ESD
protection
for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit
Formerly Developmental Type TA49360.
Symbol
Features
Ignition Energy = 340mJ at T
J (STARTING)
= 25
o
C
Typical Internal Clamp Voltage = 410V at T
J
= 25
o
C
Logic Level Gate Drive
ESD Gate Protection
T
J
= 175
o
C
Internal Series and Shunt Gate Resistors
24V Reverse Battery Capability
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S14N41G3VLS
TO-263AB
14N41GVL
HGTP14N41G3VL
TO-220AB
14N41GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A
EMITTER
GATE
R
2
R
1
COLLECTOR
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
September 2000
相關PDF資料
PDF描述
HGTP14N41G3VL TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB
HGT1S14N41G3VLS 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs)
HGTP14N41G3VL 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs)
HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S20N35G3VL 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
相關代理商/技術參數
參數描述
HGT1S14N41G3VLS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N41G3VLT 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S15N120C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S15N120C3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S1N120BNDS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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