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參數資料
| 型號： | HGT1S20N60C3RS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 107K |
| 代理商： | HGT1S20N60C3RS |
S E M I C O N D U C T O R
5-3
HGTG20N60C3R, HGTP20N60C3R,
HGT1S20N60C3R, HGT1S20N60C3RS
40A, 600V, Rugged UFS Series N-Channel IGBTs
Features
40A, 600V T
J
= 25
o
C
600V Switching SOA Capability
Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . 330ns
Short Circuit Rating at T
J
= 150
o
C. . . . . . . . . . . . . 10
μ
s
Low Conduction Loss
Description
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same T
J
as the
IGBT under test.
Formerly Developmental Type TA49047.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60C3R
TO-220AB
20N60C3R
HGTG20N60C3R
TO-247
20N60C3R
HGT1S20N60C3R
TO-262AA
20N60C3R
HGT1S20N60C3RS
TO-263AB
20N60C3R
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
C
E
G
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
JEDEC TO-262AA
E
C
G
COLLECTOR
(FLANGE)
ECG
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
A
A
M
G
EC
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
4226.1
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGTG20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| HGT1S20N60C3S | 45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S | XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN |
| HGT1S20N60C3S9A | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S20N60C3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S9A | 功能描述:IGBT 晶體管 45a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
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