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參數資料
| 型號： | HGT1S2N120BNDS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/7頁 |
| 文件大小： | 87K |
| 代理商： | HGT1S2N120BNDS |
1
File Number
4698.2
HGTP2N120BND, HGT1S2N120BNDS
12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type TA49056.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49310.
Symbol
Features
12A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance
SPICE Model
www.intersil.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BND
TO-220AB
2N120BND
HGT1S2N120BNDS
TO-263AB
2N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.
E
G
C
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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