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參數資料
| 型號： | HGT1S2N120CNDS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/9頁 |
| 文件大小： | 498K |
| 代理商： | HGT1S2N120CNDS |
2005 Fairchild Semiconductor Corporation
HGTP2N120CN, HGT1S2N120CN Rev. C
1
www.fairchildsemi.com
H
March 2005
HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
13A, 1200V, T
C
= 25
°
C
1200V Switching SOA Capability
Typical Fall Time 360ns at T
J
= 150
°
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating SABER Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
Related Literature
TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Informations
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-
263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
Description
The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Part Number
Package
Brand
HGTP2N120CN
TO-220AB
2N120CN
HGT1S2N120CN
TO-262
2N120CN
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
C
E
G
G
C
E
COLLECTOR
(FLANGE)
E
CG
COLLECTOR
(FLANGE)
TO-220
TO-262
相關PDF資料 |
PDF描述 |
|---|---|
| HGT1S2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S5N120BNS | XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN |
| HGT1S5N120CNS | 25A, 1200V, NPT Series N-Channel IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S2N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB |
| HGT1S2N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB |
| HGT1S3N60A4DS | 功能描述:IGBT 晶體管 TO-263 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S3N60A4DS9A | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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