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參數資料
| 型號： | HGT1S7N60A4S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 204K |
| 代理商： | HGT1S7N60A4S9A |
2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
HGT1S7N60A4S9A, HGTG7N60A4
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
>100kHz Operation at 390V, 7A
200kHz Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time
. . . . . . . . . . . . . . . . . . . 75
ns at T
J
= 125
o
C
Low Conduction Loss
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S7N60A4S9A
TO-263AB
7N60A4
HGTG7N60A4
TO-247
7N60A4
HGTP7N60A4
TO-220AB
7N60A4
NOTE: When ordering, use the entire part number.
C
E
G
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
C
G
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
Data Sheet
August 2003
HGTP7N60A4
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| HGTD7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP7N60C3D | 72 MACROCELL 3.3 VOLT ISP CPLD |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S7N60A4S9A_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
| HGT1S7N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S7N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S7N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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