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參數資料
| 型號： | HGT1S7N60B3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 94K |
| 代理商： | HGT1S7N60B3DS |
1
File Number
4413.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP7N60B3D, HGT1S7N60B3DS
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
Symbol
Features
14A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60B3D
TO-220AB ALT
G7N60B3D
HGT1S7N60B3DS
TO-263AB
G7N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
January 2000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60B3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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