- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385377 > HGT5A40N60A4D (INTERSIL CORP) 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | HGT5A40N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 100K |
| 代理商： | HGT5A40N60A4D |
2-3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
= 15V
R
G
= 2.2
L = 200
μ
H
Test Circuit (Figure 24)
-
27
-
ns
Current Rise Time
t
rI
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
185
225
ns
Current Fall Time
t
fI
-
55
95
ns
Turn-On Energy (Note 2)
E
ON1
-
400
-
μ
J
Turn-On Energy (Note 2)
E
ON2
-
1220
1400
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
700
800
μ
J
Diode Forward Voltage
V
EC
I
EC
= 40A
-
2.25
2.7
V
Diode Reverse Recovery Time
t
rr
I
EC
= 40A, dI
EC
/dt = 200A/
μ
s
-
48
55
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
38
45
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.2
o
C/W
Diode
-
-
1
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V
70
80
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
100
0
I
C
,
25
50
300
400
200
100
500
600
0
125
150
75
175
200
225
T
J
= 150
o
C, R
G
= 2.2
, V
GE
= 15V, L = 100
μ
H
HGT5A40N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD10N40F1S | 10A, 400V and 500V N-Channel IGBTs |
| HGTD10N50F1 | 10A, 400V and 500V N-Channel IGBTs |
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs |
| HGTD10N40F1 | 10A, 400V and 500V N-Channel IGBTs |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTA32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTB12N60D1C | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N40F1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N40F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N50F1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。