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參數資料
| 型號： | HGTD10N50F1S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數： | 4/4頁 |
| 文件大小： | 33K |
| 代理商： | HGTD10N50F1S |
3-4
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ISO9000
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
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http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
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HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
100
10
1
f
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25
, PT = 75W, L = 50
μ
H
V
CE
= 200V
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
NOTE:
V
C
,500
375
250
125
0
V
G
,
10
5
0
V
CC
= BV
CES
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
GATE-
EMITTER
VOLTAGE
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
R
L
= 100
I
G(REF)
= 0.33mA
V
GE
= 10V
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 50
μ
H
V
400V
+
R
L
-
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| HGTD2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
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