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參數資料
| 型號： | HGTD3N60A4 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 600V的，開關電源系列N溝道IGBT的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 227K |
| 代理商： | HGTD3N60A4 |
S E M I C O N D U C T O R
1
HGTD3N60C3,
HGTD3N60C3S
6A, 600V, UFS Series N-Channel IGBTs
June 1997
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25
o
C and
150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Symbol
N-CHANNEL ENHANCEMENT MODE
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3
TO-251AA
G3N60C
HGTD3N60C3S
TO-252AA
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
C
E
G
JEDEC TO-251AA
JEDEC TO-252AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1997
File Number
4139.3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTD3N60A4S | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
| hgtd3n60b3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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