- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGTD7N60C3 (Fairchild Semiconductor Corporation) 14A, 600V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號： | HGTD7N60C3 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 第14A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 153K |
| 代理商： | HGTD7N60C3 |
S E M I C O N D U C T O R
3-16
HGTD7N60C3,
HGTD7N60C3S, HGTP7N60C3
14A, 600V, UFS Series N-Channel IGBTs
January 1997
Features
14A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Description
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are
MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Add the suffix 9A to obtain the TO-252AA variant in tape and
reel, i.e. HGTD7N60C3S9A.
Formerly Developmental Type TA49115.
Packaging
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER
HGTD7N60C3
HGTD7N60C3S
HGTP7N60C3
NOTE: When ordering, use the entire part number.
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
G7N60C
G7N60C
G7N60C3
GATE
EMITTER
COLLECTOR
COLLECTOR (FLANGE)
GATE
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
EMITTER
COLLECTOR
(FLANGE)
C
E
G
HGTD7N60C3, HGTD7N60C3S
HGTP7N60C3
600
UNITS
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 50
.
14
7
56
±
20
±
30
A
A
A
V
V
40A at 480V
60
0.48
100
-40 to 150
260
1
8
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1997
File Number
4141.2
相關PDF資料 |
PDF描述 |
|---|---|
| HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs |
| HGTG10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGTG10N120BN | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD7N60C3S | 制造商:Harris Corporation 功能描述: |
| HGTD7N60C3S9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD8P50G1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD8P50G1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD8P50GIS | 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。