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參數(shù)資料
| 型號： | HGTG12N60D1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| 中文描述： | 21 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 229K |
| 代理商： | HGTG12N60D1D |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Symbol
Features
>100kHz Operation at 390V, 12A
200kHz Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S9A
TO-263AB
12N60A4
NOTE: When ordering, use the entire part number.
C
E
G
C
G
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
August 2003
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PDF描述 |
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| HGTG12N60B3 | 27A, 600V, UFS Series N-Channel IGBTs |
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| HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTP12N60B3D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG12N60DID | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG15N1203D | 制造商:Harris Corporation 功能描述: |
| HGTG15N120C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG15N120C3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG18N120BN | 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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