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參數(shù)資料
| 型號： | HGTG20N120C3D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 45 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 97K |
| 代理商： | HGTG20N120C3D |
1
HGTG20N120C3D
45A, 1200V UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-parallel with the IGBT was formerly
developmental type TA49155.
The IGBT diode combination was formerly developmental
type TA49264.
Features
45A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 300ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N120C3D
TO-247
20N120C3D
NOTE: When ordering, use the entire part number.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY
ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
C
E
G
G
C
E
Data Sheet
October 1998
File Number
4508.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:63A, 1200V, NPT Series N-Channel IGBT |
| HGTG20N120CND | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N50C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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