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參數資料
| 型號： | HGTG20N120CND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 63 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 121K |
| 代理商： | HGTG20N120CND |
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
5
10
15
20
25
30
35
15
40
25
30
35
40
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
0
20
80
60
30
5
40
25
20
15
40
35
100
120
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
10
20
5
250
15
150
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
30
450
40
35
350
400
25
300
R
G
= 3
, L = 1mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
5
100
300
15
200
500
700
30
20
40
35
R
G
= 3
, L = 1mH, V
CE
= 960V
400
600
25
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
C
,
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
6
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
0
0
100
50
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 30
, T
C
= 25
o
C
V
CE
= 1200V
10
15
200
HGTG20N120CND
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| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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