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參數資料
| 型號： | HGTG20N50C1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 26 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 5/5頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HGTG20N50C1D |
3-75
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HGTG20N50C1D
FIGURE 15. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC
Test Circuit
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
100
10
1.0
0.1
0.01
I
E
,
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
μ
H
V
(CLP) =
300V
R
L
= 4
80V
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相關代理商/技術參數 |
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|---|---|
| HGTG20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60A4D | 功能描述:IGBT 晶體管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
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