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參數(shù)資料
| 型號： | HGTG20N60B3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N溝道絕緣柵雙極晶體管（帶反并行超快速二極管)) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 135K |
| 代理商： | HGTG20N60B3D |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
40
10
100
500
V
CE
= 480V
f
MAX2
= (P
D
- P
C
)/(E
ON
+E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10
, L = 100mH
100
200
300
400
500
600
700
0
20
0
40
80
100
120
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10
60
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
0.1
0.2
0.05
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
R
0.5
25
o
C
150
o
C
100
o
C
0
0.5
1.0
1.5
2.0
2.5
20
40
60
80
100
0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
1
10
20
5
50
40
30
20
10
0
t
b
t
r
,
I
EC
, FORWARD CURRENT (A)
t
rr
t
a
T
C
= 25
o
C, dI
EC
/dt = 100A/
μ
s
HGTG20N60B3D
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| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 帶超快二極管N溝道絕緣柵雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60B3D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60B3D_Q | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60C3 | 制造商:Harris Corporation 功能描述: |
| HGTG20N60C3D | 功能描述:IGBT 晶體管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
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