欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: HGTG34N100E2
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: LED 5MM VERT SUP DIFF YEL PC MNT
中文描述: 55 A, 1000 V, N-CHANNEL IGBT, TO-247
文件頁數: 4/5頁
文件大小: 38K
代理商: HGTG34N100E2
3-127
HGTG34N100E2
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
100
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
Typical Performance Curves
(Continued)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
5
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
6
7
100
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
CE
= 400V, V
GE
= 10V AND 15V
V
CE
= 800V, V
GE
= 10V AND 15V
T
J
= +150
o
C, R
G
= 25
,
L = 50
μ
H
1.0
0.0
D
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
2.0
1.5
0.5
T
J
= +150
o
C
V
CE
= 800V
L = 50
μ
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
10
1
f
O
,
1
10
80
I
CE
, COLLECTOR-EMITTER CURRENT (A)
P
D
= ALLOWABLE DISSIPATION
T
J
= +150
o
C, T
C
= +75
o
C,
R
G
= 25
, L = 50
μ
H
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
DUTY FACTOR = 50%
R
θ
JC
= 0.5
o
C/W
NOTE:
V
CE
= 400V
V
GE
= 15V
P
C
= CONDUCTION DISSIPATION
V
CE
= 800V
V
GE
= 15V
100
10
1
I
C
,
1
2
3
4
5
V
CE(ON)
, SATURATION VOLTAGE (V)
6
7
V
GE
= 10V
T
J
= +150
o
C
T
J
= +25
o
C
0
相關PDF資料
PDF描述
HGTG40N60A4 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N溝道絕緣柵雙極型晶體管)
HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT(70A, 600V,N溝道絕緣柵雙極晶體管)
HI-1567CDI 5V MONOLITHIC DUAL TRANSCEIVERS
HI-1567CDIM 5V MONOLITHIC DUAL TRANSCEIVERS
HI-1567CDIT 5V MONOLITHIC DUAL TRANSCEIVERS
相關代理商/技術參數
參數描述
HGTG40N6 制造商:HARRIS 制造商全稱:HARRIS 功能描述:70A, 600V, UFS Series N-Channel IGBT
HGTG40N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60A4 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
HGTG40N60B3 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC
主站蜘蛛池模板: 惠来县| 固始县| 乌兰察布市| 贡嘎县| 台北县| 定边县| 甘谷县| 大余县| 兴安盟| 雷州市| 天台县| 淅川县| 洪江市| 定南县| 汉川市| 宁乡县| 新兴县| 青河县| 阿城市| 哈巴河县| 旬邑县| 平果县| 通榆县| 北辰区| 天峨县| 湟中县| 威海市| 增城市| 玛曲县| 辽源市| 连江县| 江都市| 岗巴县| 莒南县| 金寨县| 平塘县| 文昌市| 平潭县| 襄城县| 木里| 湘潭市|