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參數資料
| 型號： | HGTP10N40C1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 37K |
| 代理商： | HGTP10N40C1D |
3-20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Features
10A, 400V and 500V
V
CE(ON)
: 2.5V Max.
T
FALL
: 1
μ
s, 0.5
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP10N40C1D
HGTP10N40E1D
400
400
±
20
17.5
10
75
0.6
-55 to +150
HGTP10N50C1D
HGTP10N50E1D
500
500
±
20
17.5
10
75
0.6
-55 to +150
UNITS
V
V
V
A
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
W
W/
o
C
o
C
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
File Number
2405.5
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP10N40F1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP11N120CN | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk |
| HGT1S11N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S11N120CNS | 43A, 1200V, NPT Series N-Channel IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTP10N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP10N40F1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N50C1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 12A, 400V and 500V N-Channel IGBTs |
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