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參數資料
| 型號： | HI1109 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 30K |
| 代理商： | HI1109 |
HI-SINCERITY
MICROELECTRONICS CORP.
HI1109
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9019-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
Description
Low frequency high voltage amplifier
Complementary pair with HI1609
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................. -55~+150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................ -160 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current ..................................................................................................... -100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE
*hFE1
*hFE2
fT
Cob
Min.
-160
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
5.5
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=-1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
D
60-120
100-200
160-320
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