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參數資料
| 型號： | HI13003 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | HI13003 |
HI-SINCERITY
MICROELECTRONICS CORP.
HI13003
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9034
Issued Date : 1999.03.17
Revised Date : 2002.05.08
Page No. : 1/3
HI13003
HSMC Product Specification
Description
These devices are designed for high-voltage, high-speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220V switchmode applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.3 W
Maximum Voltages and Currents (Ta=25
°
C)
BVCEV Collector to Emitter Voltage.................................................................................. 700 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 9 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCEV
IEBO
ICEV
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
Cob
Min.
400
700
-
-
-
-
-
-
-
8
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
21
Max.
-
-
1
1
0.5
1
3
1
1.2
40
25
-
Unit
V
V
mA
mA
V
V
V
V
V
Test Conditions
IC=10mA
IC=1mA, VBE(OFF)=1.5V
VEB=9V
VCE=700V, VBE(OFF)=1.5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=0.5A, VCE=2V
VCE=2V, IC=1A
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
TO-251
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