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參數資料
型號: HIP1012
廠商: Intersil Corporation
元件分類: 基準電壓源/電流源
英文描述: Dual Power Distribution Controller(雙電源分配控制器)
中文描述: 雙電源分配控制器(雙電源分配控制器)
文件頁數: 6/15頁
文件大小: 544K
代理商: HIP1012
6
The HIP1012A responds to a load short (defined as a current
level 3X the OC set point) immediately, driving the relevant
N-Channel MOSFET gate to 0V in less than 10
μ
s. The gate
voltage is then slowly ramped up turning on the N-Channel
MOSFET to the programmed current limit level; this is the
start of the time out period. The programmed current level is
held until either the OC event passes or the time out period
expires. If the former is the case then the N-Channel
MOSFET is fully enhanced and the C
TIM
charging current is
diverted away from the capacitor. If the time out period expires
prior to OC resolution then both gates are quickly pulled to 0V
turning off both N-Channel MOSFETs simultaneously.
Upon any UV condition the PGOOD signal will pull low when
tied high through a resistor to the logic supply. This pin is a
fault indicator but not the OC latch off indicator. For an OC
latch off indication, monitor CTIM, pin 10. This pin will rise
rapidly to 12V once the time out period expires. See Simplified
Block Diagram on page 2 for OC latch off circuit suggestion.
The HIP1012A is reset by a rising edge on either PWRON pin
and is turned on by either PWRON pin being driven low. The
HIP1012A can control either +12V/5V or +3.3V/+5V supplies.
Tying the PWRON1 pin to V
DD
, invokes the +3.3V/+5V
voltage mode. In this mode, the external charge pump
capacitor is not needed and Cpump, pin 11 is tied directly to
V
DD
.
HIP1012A Application Considerations
Current Regulation vs current trip
often causes confusion
when using this and other ICs with a Current Regulation (CR)
feature. The CR level is the level at which the HIP1012 will
hold an overcurrent load for the programmed duration. This
level is programmable by the RLIM and RSENSE resistors
values. As the current being monitored by the HIP1012A
approaches a level >85% of the CR level the HIP1012A may
trip-off due to variances in manufacturing and the design of
the low gain high speed input comparators. In addition with
the high levels of inrush current e.g., highly capacitive loads
and motor startup currents, choosing the current limiting level
is crucial to provide both protection and still allow for this
inrush current without latching off. Consider this in addition to
the time out delay when choosing MOSFETs for your design.
To these ends it is suggested that CR levels be programmed
to 150% of nominal load.
When using the HIP1012A in the 12V and 5V mode
additional V
DD
decoupling may be necessary to prevent a
power on reset due to a sag on V
DD
pin upon an OC latch off.
The addition of a capacitor from V
DD
to GND may often be
adequate but a small value isolation resistor may also be
necessary (see the Simplified Block Diagram on page 2).
Current loop stabilization
is facilitated through a small value
resistor in series with the gate timing capacitor. As the
HIP1012A drives a highly inductive current load, instability
characterized by the gate voltage repeatedly ramping up and
down may appear. A simple method to enhance stability is
provided by the substitution of a larger value gate resistor.
Typically this situation can be avoided by eliminating long
point to point wiring to the load.
Random resets
occur if the HIP1012A sense pins are pulled
below ground when turning off a highly inductive load. Place a
large load capacitor (10-50
μ
F) on the output or ISEN
clamping diodes to ground to eliminate.
During the
Time Out delay period
with the HIP1012A in
current limit mode, the V
GS
of the external N-Channel
MOSFETs is reduced driving the N-Channel MOSFET switch
into a high r
DS(ON)
state. Thus avoid extended time out
periods as the external N-Channel MOSFETs may be
damaged or destroyed due to excessive internal power
dissipation. Refer to the MOSFET manufacturer’s data sheet
for SOA information.
External Pull Down resistors
from the xISEN pins to ground
will prevent the voltage outputs from floating up due to
leakage current through the external switch FET body diode
when the FETs are disabled and the outputs are open.
Physical layout of Rsense resistors
is critical to avoid the
possibility of false overcurrent occurrences. Ideally trace
routing between the Rsense resistors and the HIP1012A is
direct and as short as possible with zero current in the sense
lines as shown below
.
TABLE 1.
R
ILIM
RESISTOR
NOMINAL OC VTH
15k
150mV
10k
100mV
7.5k
75mV
4.99k
50mV
NOTE: Nominal OC Vth = Rilim x 10
μ
A.
TABLE 2.
C
TIM
CAPACITOR
NOMINAL TIME OUT PERIOD
0.022
μ
F
4.4ms
0.047
μ
F
9.4ms
0.1
μ
F
20ms
NOTE: Nominal time-out period in seconds = C
TIM
x 200k
.
CORRECT
TO ISEN AND
CURRENT
SENSE RESISTOR
INCORRECT
FIGURE 1. SENSE RESISTOR PCB LAYOUT
R
ISET
HIP1012A
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相關代理商/技術參數
參數描述
HIP1012A 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Power Distribution Controller
HIP1012A_04 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Power Distribution Controller
HIP1012ACB 功能描述:IC CTRLRL HOT PLUG DUAL 14-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產品培訓模塊:Obsolescence Mitigation Program 標準包裝:100 系列:- 類型:熱插拔開關 應用:通用 內部開關:是 電流限制:可調 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤 供應商設備封裝:10-TDFN-EP(3x3) 包裝:管件
HIP1012ACB-T 功能描述:IC CTRLRL HOT PLUG DUAL 14-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產品培訓模塊:Obsolescence Mitigation Program 標準包裝:100 系列:- 類型:熱插拔開關 應用:通用 內部開關:是 電流限制:可調 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤 供應商設備封裝:10-TDFN-EP(3x3) 包裝:管件
HIP1012ACBTS2490 制造商:INTERSIL 功能描述:New
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