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參數(shù)資料
| 型號： | HIP6019EVAL1 |
| 廠商： | Intersil Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Advanced Dual PWM and Dual Linear Power Control |
| 中文描述： | 先進的雙PWM和線性雙電源控制 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大小： | 152K |
| 代理商： | HIP6019EVAL1 |
2-256
PWM CONTROLLER ERROR AMPLIFIERS
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBWP
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/
μ
s
PWM CONTROLLER GATE DRIVERS
Drive1 (and 2) Source
I
UGATE
VCC = 12V, V
UGATE1
(or V
GATE2
) = 6V
-
1
-
A
Drive1 (and 2) Sink
R
UGATE
V
GATE-PHASE
= 1V
-
1.7
3.5
Lower Gate Source
I
LGATE
VCC = 12V, V
LGATE
= 1V
-
1
-
A
Lower Gate Sink
R
LGATE
V
GATE
= 1V
-
1.4
3.0
PROTECTION
V
OUT1
Over-Voltage Trip
VSEN1 Rising
112
115
118
%
V
OUT2
Over-Voltage Trip
VSEN2 Rising
4.1
4.3
4.5
V
VSEN2 Input Resistance
-
70
-
k
FAULT Sourcing Current
I
OVP
V
FAULT/RT
= 10.0V
10
14
-
mA
OCSET1(and 2) Current Source
I
OCSET
V
OCSET
= 4.5V
DC
170
200
230
μ
A
Soft-Start Current
I
SS
-
11
-
μ
A
Chip Shutdown Soft-Start Threshold
-
-
1.0
V
POWER GOOD
V
OUT1
Upper Threshold
VSEN1 Rising
108
-
110
%
V
OUT1
Under-Voltage
VSEN1 Rising
92
-
94
%
V
OUT1
Hysteresis
Upper/Lower Threshold
-
2
-
%
V
OUT2
Under-Voltage
VSEN2 Rising
2.45
2.55
2.65
V
V
OUT2
Under-Voltage Hysteresis
-
100
-
mV
PGOOD Voltage Low
V
PGOOD
I
PGOOD
= -4mA
-
-
0.5
V
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 4. R
T
RESISTANCE vs FREQUENCY
FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
10
100
1000
SWITCHING FREQUENCY (kHz)
R
)
10
100
1000
R
T
PULLUP
TO +12V
R
T
PULLDOWN TO V
SS
C
GATE
= 660pF
C
GATE
= 1500pF
C
GATE
= 3600pF
C
GATE
= 4800pF
I
C
SWITCHING FREQUENCY (kHz)
20
40
140
120
100
80
60
100
200
300
400
500
600
700
800
900
1000
C
UGATE1
= C
UGATE2
= C
LGATE1
= C
GATE
V
VCC
= 12V,V
IN
= 5V
HIP6019
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