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參數資料
| 型號： | HIP6601ACB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 84K |
| 代理商： | HIP6601ACB |
1
File Number
4819
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
UltraFET is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
Pentium is a registered trademark of Intel Corporation. AMD is a registered trademark of Advanced Micro Devices, Inc.
HIP6601, HIP6603
Synchronous-Rectified Buck MOSFET
Drivers
The HIP6601 and HIP6603 are high frequency, dual
MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP630x
Multi-Phase Buck PWM controller and Intersil UltraFETs
form a complete core-voltage regulator solution for
advanced microprocessors.
The HIP6601 drives the lower gate in a synchronous-rectifier
bridge to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603 drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the
capacity to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a 3000pF load
with a 30ns propagation delay and 50ns transition time. Both
products implement bootstrapping on the upper gate with
only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
Features
Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
Internal Bootstrap Device
Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
Small 8 Lead SOIC Package
Dual Gate-Drive Voltages for Optimal Efficiency
Three-State Input for Bridge Shutdown
Supply Under Voltage Protection
Applications
Core Voltage Supplies for Intel Pentium III, AMD
Athlon Microprocessors
High Frequency Low Profile DC-DC Converters
High Current Low Voltage DC-DC Converters
Pinout
HIP6601CB/HIP6603CB
(SOIC)
TOP VIEW
Block Diagram
Ordering Information
PART NUMBER
TEMP. RANGE
(
o
C)
PACKAGE
PKG. NO.
HIP6601CB
0 to 85
8 Ld SOIC
M8.15
HIP6603CB
0 to 85
8 Ld SOIC
M8.15
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
PVCC
VCC
LGATE
PVCC
VCC
PWM
+5V
10K
10K
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
BOOT
UGATE
PHASE
LGATE
GND
VCC FOR HIP6601
PVCC FOR HIP6603
Data Sheet
January 2000
相關PDF資料 |
PDF描述 |
|---|---|
| HIP6601CB | 150000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HIP6601ECB | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601ECB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601ACB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6602A | Dual Channel Synchronous-Rectified Buck MOSFET Drivers(同步整流的MOSFET驅動器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HIP6601ACB-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP6601B | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
| HIP6601BCB | 功能描述:IC DRIVER MOSFET DUAL 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP6601BCB-T | 功能描述:IC DRVR MOSFET SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP6601BCBZ | 功能描述:功率驅動器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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