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參數(shù)資料
| 型號： | HL1566AF |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1.55 μm Laser Diode with EA Modulator(InGaAsP激光二極管) |
| 中文描述： | 1.55微米半導體激光器與EA調(diào)制器（InGaAsP的激光二極管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 25K |
| 代理商： | HL1566AF |
HL1566AF
1.55 μm Laser Diode with EA Modulator
Description
The HL1566AF is a 1.55 μm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum
well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps
external modulation systems for up to 600 km.
Features
Long wavelength output:
λ
p = 1550 nm Typ.
High extinction ratio: 13 dB Min. at V
R(EA)
= –2 V
Fast pulse response: tr/tf
≤
80 ps
Dynamic single longitudinal mode: Sr = 40 dB Typ.
Package: open air package (chip on carrier) with micro strip-line
Modulator
LD
50
Internal Circuit
HL1566AF
Package Type
HL1566AF: AF
1
3
2
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