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參數資料
| 型號： | HLMP-RDxx |
| 英文描述： | High Performance 4 mm Oval LED Lamps(高性能 4 mm 橢圓形 LED照明燈) |
| 中文描述： | 高性能4毫米橢圓形LED燈具（高性能4毫米橢圓形發光二極管照明燈） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | HLMP-RDXX |
Agilent HLMP-LDxx, -SDxx,
-MDxx, -RLxx, -RDxx, -SLxx
High Performance 4 mm
Oval LED Lamps
Reliability Data Sheet
Description
The following cumulative test
results have been obtained from
testing performed at Agilent
Technologies in accordance
with the latest revisions of
JIS C 7021.
Agilent tests parts at the absolute
maximum rated conditions
recommended for the device.
The actual performance you
obtain from Agilent parts
depends on the electrical and
environmental characteristics of
your application but will probably
be better than the performance
outlined in Table 1.
Failure Rate Prediction
The failure rate of semiconductor
devices is determined by the
junction temperature of the device.
The relationship between ambient
temperature and actual junction
temperature is given by the
following:
T
J
(
°
C) = T
A
(
°
C) +
θ
JA
P
AVG
where
T
A
= ambient temperature in
°
C
θ
JA
= thermal resistance of
junction-to-ambient in
°
C/watt
P
AVG
= average power dissipated
in watts
The estimated MTBF and failure
rate at temperatures lower than
the actual stress temperature can
be determined by using an
Arrhenius model for temperature
acceleration. Results of such
calculations are shown in the table
on the following page using an
activation energy of 0.43 eV
(reference MIL-HDBK-217).
Table 1. Life Tests
Demonstrated Performance
Stress Test
Conditions
T
A
= 55
°
C,
I
F
= 30 mA
Total
Device Hrs.
224,000
Units
Tested
224
Units
Failed
0
Failure Rate
(% /1K Hours)
0.446
Colors
TS/AS AlInGaP
Red/Amber
MTBF
224,000
TS/AS AlInGaP
Red
T
A
= -40
°
C,
I
F
= 30 mA
56,000
56
0
56,000
1.785
Point Typical Performance
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