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參數資料
| 型號： | HLX6228TBH |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 128K x 8 STATIC RAM?Low Power SOI |
| 中文描述： | 128K的× 8靜態RAM？低功耗絕緣硅 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 156K |
| 代理商： | HLX6228TBH |
OTHER
Read/Write Cycle Times
≤
32 ns (-55 to 125
°
C)
Typical Operating Power <9 mW/MHz
JEDEC Standard Low Voltage
CMOS Compatible I/O
Single 3.3 V
±
0.3 V Power Supply
Asynchronous Operation
Packaging Options
– 32-Lead CFP (0.820 in. x 0.600 in.)
– 40-Lead CFP (0.775 in. x 0.710 in.)
128K x 8 STATIC RAM—Low Power SOI
Military & Space Products
RADIATION
Fabricated with RICMOS
IV Silicon on Insulator
(SOI) 0.7
μ
m Low Power Process (L
eff
= 0.55
μ
m)
Total Dose Hardness through 1x10
6
rad(Si)
Neutron Hardness through 1x10
14
cm
-2
Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
Dose Rate Survivability through 1x10
11
rad(Si)/s
Soft Error Rate of <1x10
-10
Upsets/bit-day in Geosyn-
chronous Orbit
No Latchup
Solid State Electronics Center 12001 State Highway 55, Plymouth, MN 55441 (800) 323-8295 http://www.myspaceparts.com
FEATURES
GENERAL DESCRIPTION
The 128K x 8 Radiation Hardened Static RAM is a high
performance 131,072 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in low voltage systems operating in radiation
environments. The RAM operates over the full military
temperature range and requires only a single 3.3 V
±
0.3V
power supply. The RAM is compatible with JEDEC standard
low voltage CMOS I/O. Power consumption is typically less
than 9 mW/MHz in operation, and less than 2 mW when de-
selected. The RAM read operation is fully asynchronous, with
an associated typical access time of 32 ns at 3.3 V.
Honeywell’s enhanced SOI RICMOSIV (Radiation Insensi-
tive CMOS) technology is radiation hardened through the use
of advanced and proprietary design, layout and process
hardening techniques. The RICMOS IV low power process is
a SIMOX CMOS technology with a 150 gate oxide and a
minimum drawn feature size of 0.7
μ
m (0.55
μ
m effective gate
length—L
). Additional features include tungsten via plugs,
Honeywell’s proprietary SHARP planarization process and a
lightly doped drain (LDD) structure for improved short channel
reliability. A 7 transistor (7T) memory cell is used for superior
single event upset hardening, while three layer metal power
bussing and the low collection volume SIMOX substrate
provide improved dose rate hardening.
HLX6228
相關PDF資料 |
PDF描述 |
|---|---|
| HLX6228TBN | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TBR | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEF | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEH | 128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEN | 128K x 8 STATIC RAM?Low Power SOI |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HLX6228TBN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TBR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
| HLX6228TEN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 STATIC RAM?Low Power SOI |
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